1. Topic ID: 1227
  2. Research topic: Voltage controlled magnetoresistance in multiferroic tunnel junctions
  3. Supervisor: prof. dr hab. inż. Marek Przybylski
  4. Supervisor’s email address: marprzyb@agh.edu.pl
  5. Second supervisor: dr hab. inż. Witold Skowroński
  6. Abstract: The utilization of magnetic elements and spin current in spintronics devices enables the development of computer magnetic random access memories. The use of spin as a tool for information writing and reading makes it possible to obtain devices that switch faster, with lower energy consumption, significantly reduced Joule heating and being non-volatile at the same time. To realize this idea we focuse on devices based on oxide materials, in particular on the multiferroic tunnel junctions (MFTJ) with an addition of a spin-orbit coupling material. Such MFTJ can be operated by a current flowing only through the upper electrode utilizing spin Hall effect (SHE) and spin orbit torque (SOT). The subject we propose relates to recently observed interesting phenomena (with a high application potential) like a possibility of tunning SOT with the ferroelectric polarization of the ferroelectric tunneling barrier.
  7. Research facilities: The experimental work we propose will be carried out in the pulse-laser deposition, cleanroom and other laboratories of Academic Centre for Materials and Nanotechnology at our University.
  8. Funding source: Subsidy